FDME1024NZT
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDME1024NZT 双路场效应管, MOSFET, 双N沟道, 3.8 A, 20 V, 0.055 ohm, 4.5 V, 700 mV
The is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
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- Low profile
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- Halogen-free
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- ±8V Gate to source voltage
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- 3.8A Continuous drain current
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- 6A Pulsed drain current