FQD11P06TM
数据手册.pdfFAIRCHILD SEMICONDUCTOR FQD11P06TM 晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V 新
General Description
These P-Channel enhancement mode power field effect transistors are produced using ís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
-9.4A, -60V, RDSon= 0.185Ω@VGS= -10 V
Low gate charge typical 13 nC
Low Crss typical 45 pF
Fast switching
100% avalanche tested
Improved dv/dt capability