FQPF33N10
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
100V N沟道MOSFET 100V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Product Highlights
18A, 100V, R
DSon
= 0.052
W
@V
GS
= 10 V
Low gate charge typical 38 nC
Low Crss typical 62 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
175°Cmaximum junction temperature rating