FDG327N
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDG327N 晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.057 ohm, 4.5 V, 700 mV
最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 1.5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 140mΩ@ VGS = 1.8V, ID =1.2A 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.4~1.5V 耗散功率Pd Power Dissipation| 420mW/0.42W Description & Applications| 20V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET is produced using Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features Fast switching speed Low gate charge High performance trench technology for extremely low RDSON High power and current handling capability. 描述与应用| 20V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 开关速度快 低栅极电荷 高性能沟道技术极低的RDS（ON） 高功率和电流处理能力。