FDS6670AS

PowerTrench® SyncFET™ MOSFET，Fairchild Semiconductor设计用于尽量减少功率转换的损耗，同时保持极佳的切换性能 高性能通道技术，RDS（接通）极低 SyncFET™ 得益于高效的肖特基主体二极管 应用：同步整流直流-直流转换器、电动机驱动器、网络负载点低侧开关 ### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

General Description

The is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDS6670AS includes an integrated Schottky diode using ’s monolithic SyncFET technology.

Features

• 13.5 A, 30 V. RDSON max= 9.0 mΩ @ VGS = 10 V

                   RDSON max= 11.5 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge 27nC typical

• High performance trench technology for extremely low RDSON and fast switching

• High power and current handling capability

Applications

• DC/DC converter

• Low side notebook