FDN338P
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDN338P 晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV
最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -1.6A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.115Ω @-1.6A,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4--1.0V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDSON Exceptional on-resistance and maximum DC current capability 描述与应用| 行业标准外形SOT-23表面贴装 包装使用专有SuperSOT TM-3设计 卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力