FDD6680AS

PowerTrench® SyncFET™ MOSFET，Fairchild Semiconductor设计用于尽量减少功率转换的损耗，同时保持极佳的切换性能 高性能通道技术，RDS（接通）极低 SyncFET™ 得益于高效的肖特基主体二极管 应用：同步整流直流-直流转换器、电动机驱动器、网络负载点低侧开关 ### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

The is a SyncFET™ N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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21nC Typical low gate charge