FDC637BNZ
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
The is a 2.5V specified N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- Manufactured using green packaging material
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- Halide-free
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- >2kV Typical HBM ESD protection level
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- 8nC Typical low gate charge