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DMC3032LSD-13

DMC3032LSD-13

数据手册.pdf
Diodes(美台) 分立器件

DMC3032LSD-13 编带

Mosfet Array N and P-Channel 30V 8.1A, 7A 2.5W Surface Mount 8-SO


得捷:
MOSFET N/P-CH 30V 8.1A/7A 8SOP


立创商城:
DMC3032LSD-13


贸泽:
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET


艾睿:
Thanks to Diodes Zetex, both your amplification and switching needs can be taken care of with one component: the DMC3032LSD-13 power MOSFET. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N/P-CH 30V 8.1A/7A 8-Pin SO T/R


TME:
Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-8.1A; 2.5W; SO8


Verical:
Trans MOSFET N/P-CH 30V 8.1A/7A Automotive 8-Pin SO T/R


Win Source:
MOSFET N/P-CH 30V 8.1A/7A 8SOP


DMC3032LSD-13中文资料参数规格
技术参数

额定功率 2.5 W

通道数 2

极性 N+P

耗散功率 2.5 W

漏源极电压Vds 30 V

连续漏极电流Ids 8.1A/7A

输入电容Ciss 404.5pF @15VVds

额定功率Max 2.5 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2500 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

DMC3032LSD-13引脚图与封装图
暂无图片
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