DMN2014LHAB-7
数据手册.pdfDiodes(美台)
分立器件
DMN2014LHAB-7 编带
MOSFET - 阵列 2 N 沟道(双)共漏 20V 9A 800mW 表面贴装型 U-DFN2030-6(B 类)
得捷:
MOSFET 2N-CH 20V 9A 6-UDFN
立创商城:
2个N沟道 20V 9A
贸泽:
MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF
艾睿:
Make an effective common source amplifier using this DMN2014LHAB-7 power MOSFET from Diodes Zetex. Its maximum power dissipation is 1700 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MOSFET Dual N-Channel 20V 9A U-DFN2030-6
安富利:
Trans MOSFET N-CH 20V 9.3A 6-Pin DFN T/R
Verical:
Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R