DJT4031N-13
数据手册.pdfDiodes(美台)
分立器件
DIODES INC. DJT4031N-13 单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
Thanks to Zetex, your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.