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DTC115TET1G

DTC115TET1G

数据手册.pdf

SOT-416 NPN 50V 100mA

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

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Simplifies Circuit Design
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Reduces Board Space
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Reduces Component Count
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S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
DTC115TET1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 300 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 160 @5mA, 10V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-75-3

外形尺寸

封装 SC-75-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

DTC115TET1G引脚图与封装图
暂无图片
在线购买DTC115TET1G
型号 制造商 描述 购买
DTC115TET1G ON Semiconductor 安森美 SOT-416 NPN 50V 100mA 搜索库存
替代型号DTC115TET1G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: DTC115TET1G

品牌: ON Semiconductor 安森美

封装: SC-75-3 NPN 300mW

当前型号

SOT-416 NPN 50V 100mA

当前型号

型号: DDTC115TE-7

品牌: 美台

封装: SOT-523 NPN 50V 100mA

功能相似

TRANS PREBIAS NPN 150mW SOT523

DTC115TET1G和DDTC115TE-7的区别