DTA114YET1G
数据手册.pdfON SEMICONDUCTOR DTA114YET1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-75 新
- 双极 BJT - 单,预偏置 PNP - 预偏压 50 V 100 mA 200 mW 表面贴装型 SC-75,SOT-416
得捷:
TRANS PREBIAS PNP 50V 100MA SC75
立创商城:
1个PNP-预偏置 100mA 50V PNP Bipolar Digital Transistor BRT
欧时:
ON Semiconductor, DTA114YET1G
e络盟:
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the PNP DTA114YET1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-416 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-416 T/R
Win Source:
TRANS PREBIAS PNP 200MW SC75