DTA115EET1G
数据手册.pdf偏置电阻晶体管 Bias Resistor Transistors
- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 200 mW 表面贴装型 SC-75，SOT-416
立创商城:
DTA115EET1G PNP 双极数字晶体管 BRT
得捷:
TRANS PREBIAS PNP 50V 100MA SC75
艾睿:
Look no further than ON Semiconductor&s;s PNP DTA115EET1G digital transistor, which can provide a solution to your digital signal processing needs. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-416 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-416 T/R
Verical:
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R
Win Source:
TRANS PREBIAS PNP 0.2W SC75