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CAT28F001GI-12TT

CAT28F001GI-12TT

数据手册.pdf
ON Semiconductor(安森美) 电子元器件分类

1兆位的CMOS引导块闪存 1 Megabit CMOS Boot Block Flash Memory

DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca

tions of CAT28F001.

FEATURES

■Fast Read Access Time: 90/120 ns

■On-Chip Address and Data Latches

■Blocked Architecture

— One 8 KB Boot Block w/ Lock Out

• Top or Bottom Locations

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■Low Power CMOS Operation

■12.0V ±5% Programming and Erase Voltage

■Automated Program & Erase Algorithms

■High Speed Programming

■Commercial, Industrial and Automotive Temperature Ranges

CAT28F001GI-12TT中文资料参数规格
技术参数

电源电压 4.5V ~ 5.5V

封装参数

封装 LCC-32

外形尺寸

封装 LCC-32

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

CAT28F001GI-12TT引脚图与封装图
暂无图片
在线购买CAT28F001GI-12TT
型号 制造商 描述 购买
CAT28F001GI-12TT ON Semiconductor 安森美 1兆位的CMOS引导块闪存 1 Megabit CMOS Boot Block Flash Memory 搜索库存
替代型号CAT28F001GI-12TT
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: CAT28F001GI-12TT

品牌: ON Semiconductor 安森美

封装: QCCJ

当前型号

1兆位的CMOS引导块闪存 1 Megabit CMOS Boot Block Flash Memory

当前型号

型号: CAT28F001G-12T

品牌: 安森美

封装: PLCC 5V

类似代替

NOR闪存 128x8 1M 120ns

CAT28F001GI-12TT和CAT28F001G-12T的区别

型号: CAT28F001G-12TT

品牌: 安森美

封装: PLCC 125000B 32Pin

类似代替

1兆位的CMOS引导块闪存 1 Megabit CMOS Boot Block Flash Memory

CAT28F001GI-12TT和CAT28F001G-12TT的区别

型号: CAT28F001GI-12T

品牌: 安森美

封装: PLCC

类似代替

NOR闪存 128x8 1M 120ns

CAT28F001GI-12TT和CAT28F001GI-12T的区别