CSD17501Q5A
TI(德州仪器)
分立器件
30V ， N通道NexFET功率MOSFET 30V, N-Channel NexFET Power MOSFETs
Make an effective common gate amplifier using this power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
