CSD86311W1723
TI(德州仪器)
分立器件
双路 N 通道 NexFET™ 功率 MOSFET
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
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- Dual N-Ch MOSFETs
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- Common Source Configuration
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- Small Footprint 1.7 mm × 2.3 mm
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- Ultra Low Qg and Qgd
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- Pb Free
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- RoHS Compliant
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- Halogen Free
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- APPLICA ONS
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- Battery Management
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- Battery Protection
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- DC-DC Converters
