CSD23202W10T
TI(德州仪器)
分立器件
TEXAS INSTRUMENTS CSD23202W10T 晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
The is a NexFET™ P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in a small 1 × 1mm outline. It has excellent thermal characteristics in an ultra-low profile.
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- Ultra-low Qg and Qgd
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- Low profile 0.62mm height
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- 3kV Gate ESD protection
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- Halogen-free
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- -55 to 150°C Operating junction temperature range
