BS170-D27Z
数据手册.pdfON Semiconductor(安森美)
电子元器件分类
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The BS170_D27Z is a N-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
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- High density cell design for low RDS ON
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- Voltage controlled small signal switch
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- Rugged and reliable
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- High saturation current capability