BSC010N04LSATMA1
数据手册.pdfINFINEON BSC010N04LSATMA1 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
OptiMOS™5 功率 MOSFET
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSC010N04LSATMA1, 100 A, Vds=40 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 40V 38A/100A TDSON
贸泽:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
e络盟:
晶体管, MOSFET, N沟道, 100 A, 40 V, 850 µohm, 10 V, 2 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSC010N04LSATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
TME:
Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC010N04LSATMA1 MOSFET, N-CH, 40V, 100A, TDSON-8