BSP317PH6327XTSA1
数据手册.pdfINFINEON BSP317PH6327XTSA1 晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
SIPMOS® P 通道 MOSFET
**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。
· 符合 AEC Q101 标准（请参阅数据表）
· 无铅引线电镀，符合 RoHS 标准
得捷:
MOSFET P-CH 250V 430MA SOT223-4
欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET BSP317PH6327XTSA1, 430 mA, Vds=250 V, 3针+焊片 SOT-223封装
贸泽:
MOSFET P-Ch -250V -430mA SOT-223-3
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSP317PH6327XTSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 1800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH -250V -0.43A 4-Pin SOT-223 T/R
TME:
Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Verical:
Trans MOSFET P-CH 250V 0.43A Automotive 4-Pin3+Tab SOT-223 T/R
Newark:
# INFINEON BSP317PH6327XTSA1 MOSFET Transistor, P Channel, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
Win Source:
MOSFET P-CH 250V 0.43A SOT223