BSS131
数据手册.pdf
Infineon
英飞凌
分立器件
INFINEON BSS131 晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
The from is surface mount, N channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. It is suitable for DC/DC, eMobility, motor control, onboard charger and telecom applications.
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- Automotive grade AEC-Q101 qualified
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- Drain to source voltage Vds of 240V
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- Gate to source voltage of ±20V
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- Continuous drain current Id of 110mA
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- Power dissipation pd of 360mW
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- Operating temperature range -55°C to 150°C
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- Low on state resistance of 7.7ohm at Vgs 10V