BDW46
数据手册.pdf达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, and BDW47 are complementary devices.
Features
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- High DC Current Gain - hFE = 2500 typ. @ IC = 5.0 Adc.
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- Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEOsus = 80 Vdc min. BDW46
VCEOsus = 100 Vdc min. - BDW42/BDW47
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- Low Collector Emitter Saturation Voltage
VCEsat = 2.0 Vdc max. @ IC = 5.0 Adc
VCEsat = 3.0 Vdc max. @ IC = 10.0 Adc
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- Monolithic Construction with Built-In Base Emitter Shunt resistors
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- TO-220AB Compact Package
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- Pb-Free Packages are Available