BUL642D2G

高速，高增益双极NPN晶体管，集成集电极 - 发射极和内置高效抗饱和网络 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

High Speed, High Gain Bipolar NPN Transistor with Integrated

Collector−Emitter and Built−in Efficient Antisaturation Network

The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP. Tight dynamic characteristics and lot to lot minimum spread 150 ns on storage time make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged.

Features

• Low Base Drive Requirement

• High Peak DC Current Gain 55 Typical @ IC = 300 mA/5 V

• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized Dynamic VCEsat

• “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads

• Avalanche Energy 20 mJ Typical Capability

• Pb−Free Package is Available

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