BFG591

NXP  BFG591  晶体管 双极-射频, NPN, 15 V, 7 GHz, 2 W, 200 mA, 90 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 200mA/0.2A 截止频率fTTranstion FrequencyfT| 7GHz 直流电流增益hFEDC Current GainhFE| 60~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 2W Description & Applications| NPN 7 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. 描述与应用| NPN7 GHz的宽带 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 应用 拟在GHz范围内的应用程序，如MATV或CATV放大器和射频通信用户设备。