BSC014N04LSATMA1
数据手册.pdfINFINEON BSC014N04LSATMA1 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 2 V
表面贴装型 N 通道 40 V 32A（Ta），100A（Tc） 2.5W（Ta），96W（Tc） SuperSO8
得捷:
MOSFET N-CH 40V 32/100A SUPERSO8
欧时:
MOSFET N-Ch 40V 100A 1.4m OptiMOS TDSON8
贸泽:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSC014N04LSATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 40V 32A 8-Pin TDSON T/R
TME:
Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 FL
Verical:
Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC014N04LSATMA1 MOSFET Transistor, N Channel, 100 A, 40 V, 0.0011 ohm, 10 V, 2 V
Win Source:
MOSFET N-CH 40V 32/100A SUPERSO8 / N-Channel 40 V 32A Ta, 100A Tc 2.5W Ta, 96W Tc Surface Mount SuperSO8