BD135G

ON SEMICONDUCTOR  BD135G  单晶体管 双极, NPN, 45 V, 1.25 W, 1.5 A, 25 hFE 新

通用 PNP ，超过 1A，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor BD135G , NPN 晶体管, 1.5 A, Vce=45 V, HFE:25, 3引脚 TO-225封装

得捷:
TRANS NPN 45V 1.5A TO126

立创商城:
BD135G

e络盟:
射频双极晶体管

艾睿:
Design various electronic circuits with this versatile NPN BD135G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
Transistor; Bipolar; Si; NPN; Medium Power; VCEO 45VDC; IC 1.5A; PD 12.5W; TO-225AA

安富利:
Trans GP BJT NPN 45V 1.5A 3-Pin TO-225 Bulk

Verical:
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin3+Tab TO-225 Box

Newark:
# ON SEMICONDUCTOR  BD135G  Bipolar BJT Single Transistor, General Purpose, NPN, 45 V, 1.25 W, 1.5 A, 250 hFE

Win Source:
TRANS NPN 45V 1.5A TO225AA