BC847CDXV6T1G

ON SEMICONDUCTOR  BC847CDXV6T1G  双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 500 mW, 100 mA, 420 hFE, SOT-563 新

小信号 NPN ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS 2NPN 45V 0.1A SOT563

立创商城:
BC847CDXV6T1G

欧时:
小信号 NPN 晶体管，ON Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。### 双极性晶体管，On SemiconductorON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管

e络盟:
双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 500 mW, 100 mA, 420 hFE, SOT-563

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC847CDXV6T1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Allied Electronics:
ON Semi BC847CDXV6T1G Dual NPN Bipolar Transistor; 0.1 A; 45 V; 6-Pin SOT-563

安富利:
Trans GP BJT NPN 45V 0.1A 6-Pin SOT-563 T/R

Chip1Stop:
Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SOT-563 T/R

Verical:
Trans GP BJT NPN 45V 0.1A 500mW 6-Pin SOT-563 T/R

Newark:
# ON SEMICONDUCTOR  BC847CDXV6T1G  Bipolar Transistor Array, NPN, 45 V, 357 mW, 100 mA, 520 hFE, SOT-563

DeviceMart:
TRANS NPN DUAL 45V SOT-563

Win Source:
TRANS 2NPN 45V 0.1A SOT563