BC848CPDW1T1G
数据手册.pdfBC 系列 30 V 100 mA 表面贴装 NPN/PNP 硅 双 通用 晶体管 SOT-23
- 双极 BJT - 阵列 NPN,PNP 30V 100mA 100MHz 250mW 表面贴装型 SC-88/SC70-6/SOT-363
欧时:
SS SC88 GP XSTR DUAL 30V
得捷:
TRANS NPN/PNP 30V 0.1A SOT363
立创商城:
BC848CPDW1T1G
贸泽:
Bipolar Transistors - BJT 100mA 30V Dual Complementary
e络盟:
双极晶体管阵列, NPN, PNP, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
艾睿:
Implement this npn and PNP BC848CPDW1T1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
ON Semi BC848CPDW1T1G NPN Bipolar Transistor, 0.1 A, 30 V, 6-Pin SOT-363
安富利:
Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R
Chip1Stop:
Trans GP BJT NPN/PNP 30V 0.1A Automotive 6-Pin SOT-363 T/R
Verical:
Trans GP BJT NPN/PNP 30V 0.1A Automotive 6-Pin SOT-363 T/R
Newark:
# ON SEMICONDUCTOR BC848CPDW1T1G TRANSISTOR ARRAY, DUAL N&P, 30V, SOT-363 New
DeviceMart:
TRANS NPN/PNP DUAL 30V SOT-363
Win Source:
TRANS NPN/PNP 30V 0.1A SOT363