BC858CE6327HTSA1

Infineon BC858CE6327HTSA1 , PNP 晶体管, 100 mA, Vce=30 V, HFE:125, 3引脚 SOT-23封装

小信号 PNP ，

得捷:
TRANS PNP 30V 0.1A SOT-23

欧时:
Infineon BC858CE6327HTSA1 , PNP 晶体管, 100 mA, Vce=30 V, HFE:125, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

艾睿:
Jump-start your electronic circuit design with this versatile PNP BC858CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 30V 0.1A SOT-23