BC817-16LT3G
数据手册.pdf通用晶体管 General Purpose Transistors
- 双极 BJT - 单 NPN 45 V 500 mA 100MHz 300 mW 表面贴装型 SOT-23-3（TO-236）
得捷:
TRANS NPN 45V 0.5A SOT23-3
立创商城:
NPN 双极晶体管
艾睿:
The NPN BC817-16LT3G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 45V 0.5A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT NPN 45V 0.5A Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R
Newark:
Bipolar BJT Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 100 hFE