BSC028N06NSATMA1
数据手册.pdfINFINEON BSC028N06NSATMA1 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
OptiMOS™5 功率 MOSFET
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSC028N06NSATMA1, 100 A, Vds=60 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 60V 23A/100A TDSON
e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 100 A, 0.0025 ohm, TDSON, 表面安装
艾睿:
As an alternative to traditional transistors, the BSC028N06NSATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R
Chip1Stop:
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 60V 100A Automotive 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC028N06NSATMA1 MOSFET Transistor, N Channel, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
Win Source:
MOSFET N-CH 60V 23A TDSON-8
