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AFT18P350-4S2LR6

数据手册.pdf
NXP(恩智浦) 分立器件

RF Power Transistor,1805 to 1880MHz, 316W, Typ Gain in dB is 16.1 @ 1805MHz, 28V, LDMOS, SOT1800

Overview

The 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

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## Features

* Production Tested in a Symmetrical Doherty Configuration

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 1000 mA, VGSB = 1.2 Vdc, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

1805 MHz| 16.1| 44.5| 7.7| –29.8

1840 MHz| 16.1| 44.3| 7.7| –31.6

1880 MHz| 15.8| 44.1| 7.6| –33.0

AFT18P350-4S2LR6中文资料参数规格
技术参数

频率 1.81 GHz

额定电流 10 µA

无卤素状态 Halogen Free

输出功率 63 W

增益 16.1 dB

测试电流 1 A

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 65 V

电源电压 28 V

封装参数

安装方式 Surface Mount

引脚数 7

封装 NI-1230-4LS2L

外形尺寸

封装 NI-1230-4LS2L

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

AFT18P350-4S2LR6引脚图与封装图
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型号 制造商 描述 购买
AFT18P350-4S2LR6 NXP 恩智浦 RF Power Transistor,1805 to 1880MHz, 316W, Typ Gain in dB is 16.1 @ 1805MHz, 28V, LDMOS, SOT1800 搜索库存