NVD5117PLT4G

ON SEMICONDUCTOR  NVD5117PLT4G  场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3

The is a -60V Single P-channel Power MOSFET features low RDS on to minimize conduction losses and high current capability.

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Avalanche energy specified

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AEC-Q101 qualified

得捷:
MOSFET P-CH 60V 11A/61A DPAK

立创商城:
NVD5117PLT4G

贸泽:
MOSFET 60V T1 PCH DPAK

e络盟:
晶体管, MOSFET, P沟道, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V

艾睿:
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NVD5117PLT4G power MOSFET. Its maximum power dissipation is 4100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R

富昌:
P-沟道 60 V 16 mOhm 85 nC 表面贴装 Mosfet - DPAK-3

Chip1Stop:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# ON SEMICONDUCTOR  NVD5117PLT4G  MOSFET Transistor, P Channel, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V

力源芯城:
-61A,-60V,P沟道MOSFET

DeviceMart:
MOSFET P-CH 60V 61A DPAK