IRLR3636PBF
数据手册.pdf
Infineon
英飞凌
分立器件
INFINEON IRLR3636PBF 晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V
The is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
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- Optimized for logic level drive
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- Very low RDS ON at 4.5V VGS
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- Superior R*Q at 4.5V VGS
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- Improved gate, avalanche and dynamic dv/dt ruggedness
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- Fully characterized capacitance and avalanche SOA
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- Enhanced body diode dV/dt and dI/dt capability