NTJD5121NT1G

ON SEMICONDUCTOR  NTJD5121NT1G  双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V

双 N 通道 MOSFET，

欧时:
ON Semiconductor 双 Si N沟道 MOSFET NTJD5121NT1G, 300 mA, Vds=60 V, 6引脚 SOT-363 SC-88封装

得捷:
MOSFET 2N-CH 60V 295MA SOT363

立创商城:
2个N沟道 60V 295mA Dual N?Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

e络盟:
双路场效应管, MOSFET, N沟道, 60 V, 304 mA, 1 ohm, SOT-363, 表面安装

艾睿:
Create an effective common drain amplifier using this NTJD5121NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 250000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
NTJD5121NT1G Dual N-channel MOSFET Transistor, 0.3 A, 60 V, 6-Pin SC-88

Chip1Stop:
Trans MOSFET N-CH 60V 0.295A 6-Pin SOT-363 T/R

Verical:
Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  NTJD5121NT1G  MOSFET Transistor, Dual N Channel, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V

力源芯城:
60V,0.33A功率MOSFET,集成ESD保护

Win Source:
MOSFET 2N-CH 60V 0.295A SOT363

DeviceMart:
MOSFET N-CH DUAL 60V SOT-363