MTD2N50E

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDSon = 3.6Ω

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDSoncapabilities. This high voltage MOSFETuses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FETis designedto withstand high energy in the avalanche and commutation modes. This new energyefficient design also offers a

drain–to–sourcediode witha fast recovery time. Designed for low voltage,high speedswitching applications in power supplies, convertersand PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating safeoperating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature

• Low Stored Gate Charge for Efficient Switching

• Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor

  Absorbs High Energy in the Avalanche Mode

• Source–to–Drain Diode Recovery time Comparable to Discrete Fast Recovery Diode