MJF45H11G

ON SEMICONDUCTOR  MJF45H11G  单晶体管 双极, PNP, -80 V, 40 MHz, 36 W, -10 A, 40 hFE 新

Thanks to , your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.