MBR360G
数据手册.pdfON SEMICONDUCTOR MBR360G 肖特基整流器, 单, 60 V, 3 A, 轴向引线, 2 引脚, 740 mV 新
The is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter, freewheeling and polarity protection diodes.
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- Cathode indicated by polarity band
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- Extremely low forward voltage
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- Low power loss and high efficiency
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- Highly stable oxide passivated junction
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- Low stored charge and majority carrier conduction