MMBT2222ATT3G
数据手册.pdf双极晶体管 - 双极结型晶体管BJT SS SC75 GP XSTR NPN 75V
Bipolar BJT Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-75, SOT-416
得捷:
TRANS NPN 40V 600MA SC75 SOT416
立创商城:
MMBT2222ATT3G
贸泽:
双极晶体管 - 双极结型晶体管BJT SS SC75 GP XSTR NPN 75V
艾睿:
The versatility of this NPN MMBT2222ATT3G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-416 T/R
Verical:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-416 T/R