STQ1NK80ZR-AP
数据手册.pdfSTMICROELECTRONICS STQ1NK80ZR-AP 功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
通孔 N 通道 800 V 300mA（Tc） 3W（Tc） TO-92-3
得捷:
MOSFET N-CH 800V 300MA TO92-3
立创商城:
N沟道 800V 300mA
贸泽:
MOSFET N Ch 800V 13 Ohm 1A
e络盟:
晶体管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
艾睿:
As an alternative to traditional transistors, the STQ1NK80ZR-AP power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 800V 0.3A 3-Pin TO-92 T/R
富昌:
N-沟道 1.6 V 365 ns 齐纳 保护 SuperMESH Mosfet 通孔 - TO-92
Chip1Stop:
Trans MOSFET N-CH 800V 0.3A 3-Pin TO-92 T/R
Verical:
Trans MOSFET N-CH 800V 0.3A 3-Pin TO-92 Ammo
Win Source:
MOSFET N-CH 800V 0.3A TO-92