BSC060N10NS3GATMA1

INFINEON  BSC060N10NS3GATMA1  晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 100V 14.9/90A 8TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC060N10NS3GATMA1, 90 A, Vds=100 V, 8引脚 TDSON封装

艾睿:
Compared to traditional transistors, BSC060N10NS3GATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 14.9A Automotive 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

Win Source:
MOSFET N-CH 100V 90A TDSON-8