2SA2169-E

TP PNP 50V 10A

- 双极 BJT - 单 PNP 50 V 10 A 130MHz 950 mW 通孔 TP

得捷:
TRANS PNP 50V 10A TP

立创商城:
PNP 50V 10A

艾睿:
Design various electronic circuits with this versatile PNP 2SA2169-E GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 950 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT PNP 50V 10A 3-Pin3+Tab TP Bulk

Verical:
Trans GP BJT PNP 50V 10A 950mW 3-Pin3+Tab IPAK Bag