2SC6017-E
数据手册.pdf双极性晶体管, NPN, 50V, TO-251-4
- 双极 BJT - 单 NPN 50 V 10 A 200MHz 950 mW 通孔 TP
得捷:
TRANS NPN 50V 10A TP
立创商城:
NPN 50V 10A
e络盟:
双极性晶体管, NPN, 50V, TO-251-4
艾睿:
Implement this versatile NPN 2SC6017-E GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 950 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 50V 10A 3-Pin3+Tab TP Bulk
Chip1Stop:
Trans GP BJT NPN 50V 10A 950mW 3-Pin3+Tab TP Bag
Verical:
Trans GP BJT NPN 50V 10A 950mW 3-Pin3+Tab IPAK Bag