2SD1803S-H
数据手册.pdfTP NPN 50V 5A
- 双极 BJT - 单 NPN 50 V 5 A 180MHz 1 W 通孔 TP
得捷:
TRANS NPN 50V 5A TP
立创商城:
2SD1803S-H
贸泽:
Bipolar Transistors - BJT BIP NPN 5A 50V
艾睿:
Implement this versatile NPN 2SD1803S-H GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN 50V 5A 3-Pin3+Tab TP Bag
Chip1Stop:
Trans GP BJT NPN 50V 5A 3-Pin3+Tab TP Bag
Verical:
Trans GP BJT NPN 50V 5A 1000mW 3-Pin3+Tab IPAK Bag