2SC5706-TL-E
数据手册.pdf双极型晶体管（ - ） 50V ，（ - ） 5A，低VCE （饱和），（ PNP）的NPN单TP / TP -FA Bipolar Transistor -50V, -5A, Low VCEsat, PNPNPN Single TP/TP-FA
Bipolar BJT Transistor NPN 50V 5A 400MHz 800mW Surface Mount 2-TP-FA
得捷:
TRANS NPN 50V 5A TPFA
立创商城:
2SC5706-TL-E
贸泽:
双极晶体管 - 双极结型晶体管BJT BIP NPN 5A 50V
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC5706-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
ON Semi 2SC5706-TL-E NPN Bipolar Transistor, 5 A, 50 V, 4-Pin TP-FA
安富利:
Trans GP BJT NPN 50V 5A 3-Pin2+Tab TP-FA T/R
Chip1Stop:
Trans GP BJT NPN 50V 5A 3-Pin2+Tab TP-FA T/R
Verical:
Trans GP BJT NPN 50V 5A 800mW 3-Pin2+Tab DPAK T/R
Win Source:
TRANS NPN 50V 5A TP-FA