2SA2016-TD-E
数据手册.pdfDC / DC转换器应用 DC / DC Converter Applications
- 双极 BJT - 单 PNP 330MHz 表面贴装型 PCP
得捷:
TRANS PNP 50V 7A PCP
立创商城:
双极晶体管,-50V,-7A,低 VCE sat, PNPNPN 单 PCP
艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, ON Semiconductor&s;s PNP 2SA2016-TD-E general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT PNP 50V 7A 4-Pin3+Tab PCP T/R
Chip1Stop:
Trans GP BJT PNP 50V 7A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT PNP 50V 7A 1300mW 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS PNP 50V 7A SOT89-3