1N5817G
数据手册.pdfON SEMICONDUCTOR 1N5817G 肖特基整流器, 通用, 单, 20 V, 1 A, DO-204AL, 2 引脚, 450 mV
The is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
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- Cathode indicated by polarity band
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- Extremely low VF
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- Low stored charge, majority carrier conduction
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- Low-power loss/high-efficiency
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- All external surfaces corrosion-resistant