TIP101G
数据手册.pdfON SEMICONDUCTOR TIP101G 达林顿双极晶体管
Designed for general−purpose amplifier and low−speed switching applications.
Features
•High DC Current Gain −hFE = 2500 Typ @ IC= 4.0 Adc
•Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEOsus= 60 Vdc Min − TIP100, TIP105
= 80 Vdc Min − TIP101, TIP106
= 100 Vdc Min − TIP102, TIP107
•Low Collector−Emitter Saturation Voltage − VCEsat= 2.0 Vdc Max @ IC
= 3.0 Adc
= 2.5 Vdc Max @ IC= 8.0 Adc
•Monolithic Construction with Built−in Base−Emitter Shunt Resistors
•Pb−Free Packages are Available