STB100NF03L-03T4
数据手册.pdfSTMICROELECTRONICS STB100NF03L-03T4 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
N-Channel 30V 100A Tc 300W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 30V 100A D2PAK
立创商城:
N沟道 30V 100A
艾睿:
Compared to traditional transistors, STB100NF03L-03T4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet iii technology.
安富利:
Trans MOSFET N-CH 30V 100A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 30V 100A Automotive 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 30V 100A D2PAK